| Autor: |
Jouglar, J., M’Ghaieth, R., Vuillermoz, P. L., Gauthier, R., Pinard, P., Poiblaud, G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1989, Vol. 66 Issue 4, p1868, 4p, 3 Diagrams, 1 Chart, 1 Graph |
| Abstrakt: |
Presents a study that produced dislocations by plastic deformation in a gallium arsenide-chromium semi-insulating material to clarify the part of dislocations in the raw materials as substrates in device technology. Correlation of the inhomogeneous distribution of the dislocations revealed by optical microscopy and the thermal conductivity measurements; Optical absorption coefficient of materials; Determination of the fringe order used for the calculation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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