Threshold voltage and field effects in semiconductor double-injection devices.

Autor: Ashley, K. L., Stawski, R.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1987, Vol. 62 Issue 4, p1484, 8p
Abstrakt: Presents an analytical formulation which addresses the current-voltage characteristic of double-injection devices from square law to threshold. Assumptions of the model; Information that can be derived from current-voltage characteristics of semiconductor double-injection devices; Review of the square law regime and the associated effective length reduction.
Databáze: Complementary Index