| Autor: |
Holm, R. T., Klein, P. H., Nordquist, P. E. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1986, Vol. 60 Issue 4, p1479, 7p, 7 Graphs |
| Abstrakt: |
Presents information on a study that evaluated cubic SiC films grown by chemical vapor deposition on silicon substrates. Brief summary of the materials preparation; Calculation of infrared spectra for ideal SiC, in semi-infinite, thick-film, and thin-film forms; Calculation of spectra for films on semi-infinite and on slablike substrates and for free-standing films. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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