| Autor: |
Mansour, Nabil S., Wang, Yang, Brennan, Kevin F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/1994, Vol. 75 Issue 8, p4009, 7p |
| Abstrakt: |
Presents information on a study which examined the effect of the hole-plasmon interaction on the calculated bulk transport properties of degenerate gallium arsenide by Monte Carlo calculations. Factors attributed to the complication faced by transport studies of degenerate semiconductor materials; Methodology of the study; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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