Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure.

Autor: Goldys, E. M., Chin, V. W. L., Tansley, T. L., Vaughan, M. R.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1994, Vol. 75 Issue 8, p4194, 7p
Abstrakt: Presents information on a study which investigated the photoluminescence excitation of gallium arsenide/gallium aluminum arsenide multiple-quantum-well structure. Influence of photon recycling on the optical-characteristics-photolumuniscense-excitation spectrum of the structure; Methodology of the study; Results and discussion.
Databáze: Complementary Index