Annealing behavior of deep-level defects in semi-insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping.
| Autor: | Müllenborn, M., Alt, H. Ch., Heberle, A. |
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| Zdroj: | Journal of Applied Physics; 4/15/1991, Vol. 69 Issue 8, p4310, 8p, 5 Black and White Photographs, 5 Charts, 5 Graphs |
| Abstrakt: | Measures the annealing behavior of deep-level defects in semi-insulating gallium arsenide (GaAs). Effect of high temperature annealing on dominant native defect; Development of a recombination model; Numerical calculation of the effect of surface recombination. |
| Databáze: | Complementary Index |
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