| Autor: |
Andersson, Gert I., Engström, Olof |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/1991, Vol. 69 Issue 8, p4418, 8p |
| Abstrakt: |
Investigates the influence of defect clusters on the recombination currents in forward-biased silicon emitter junctions. Role played by tunneling in the generation of high values of the ideality factor; Explanation of the tunneling component using the presence of local electric fields; Correlation between the concentration of isolated recombination centers and phosphorus concentration. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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