Numerical and experimental studies of the intrinsic performance of AlInAs/GaInAs heterojunction bipolar transistors.

Autor: King, H.-X. L., Woo, J. C.-S., Jensen, J. F., Stanchina, W. E., Ferro, R. J., Metzger, R. A.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1991, Vol. 69 Issue 8, p4426, 5p, 7 Graphs
Abstrakt: Presents a study that discussed selected design issues important to the operation of high-speed AlInAs/GaInAs heterojunction bipolar transistors. Description of the computational model of the study; Effect of the setback layer on the cutoff frequency; Effect of compositional grading.
Databáze: Complementary Index