Observation of radiative and nonradiative tunneling in GaAs/AlxGa1-xAs heterojunction bipolar transistors with compositionally graded base-emitter heterojunctions.

Autor: de Lyon, T. J., Casey, H. C., Enquist, P. M., Hutchby, J. A., SpringThorpe, A. J.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1989, Vol. 65 Issue 8, p3282, 4p, 1 Chart, 3 Graphs
Abstrakt: Presents a study that examined the current gain and electroluminescent (EL) spectra in a heterojunction bipolar transistor. Comparison of the EL peak intensity and transistor base current; Analysis of the radiative tunneling emission; Difference between the base current and base emitter voltage.
Databáze: Complementary Index