Incorporation of erbium in GaAs by liquid-phase epitaxy.

Autor: Bantien, F., Bauser, E., Weber, J.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1987, Vol. 61 Issue 8, p2803, 4p, 1 Chart, 4 Graphs
Abstrakt: Focuses on a study which investigated the incorporation of the lanthanide element erbium in gallium arsenide during growth by liquid-phase epitaxy by low-temperature photoluminescence measurements. Indication of the Zeeman splitting of the new photoluminescence lines; Factors that provide evidence for the incorporation of erbium within the layer; Aspects considered as candidates for applications in silica-based fiber-optic communication systems.
Databáze: Complementary Index