Autor: |
Fraas, L. M., McLeod, P. S., Partain, L. D., Cape, J. A. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 4/15/1987, Vol. 61 Issue 8, p2861, 5p, 4 Black and White Photographs, 2 Diagrams, 2 Charts, 3 Graphs |
Abstrakt: |
Provides information on a study which described the vacuum-chemical-epitaxy growth and properties of gallium antimony films. Manner in which the utilization efficiency of the group-V source material is enhanced; Information on the vacuum-chemical-wafer process; Overview of the thermal decomposition of triethyl-antimony. |
Databáze: |
Complementary Index |
Externí odkaz: |
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