| Autor: |
Gleason, K. K., Wang, K. S., Chen, M. K., Reimer, J. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/1987, Vol. 61 Issue 8, p2866, 8p, 7 Diagrams, 7 Graphs |
| Abstrakt: |
Presents a study which examined the effects of film growth reactions, etching reactions, and surface diffusion on three-dimensional film structure by the application of Monte Carlo simulations of amorphous hydrogenated silicon thin-film growth. Function of Monte Carlo models; Goal of simulation; Description of simulation. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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