| Autor: |
Magerlein, J. H., Webb, D. J., Callegari, A., Feder, J. D., Fryxell, T., Guthrie, H. C., Hoh, Peter D., Mitchell, J. W., Pomerene, A. T. S., Scontras, S., Spiers, Guy D., Greiner, J. H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/1987, Vol. 61 Issue 8, p3080, 13p, 5 Diagrams, 1 Chart, 20 Graphs |
| Abstrakt: |
Focuses on a study that characterized gallium arsenide metal-semiconductor field effect transistors and other integrated-circuit elements by including extensive process test sites on wafers with digital logic and memory circuits. Overview of vertical structure; Process characterization test results Summary. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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