| Autor: |
Shul, Randy J., Hayes, Todd R., Wetzel, Robert C., Baiocchi, Frank A., Freund, Robert S. |
| Předmět: |
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| Zdroj: |
Journal of Chemical Physics; 10/1/1988, Vol. 89 Issue 7, p4042, 6p |
| Abstrakt: |
Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV. A fast (3 keV) neutral beam of SiF2 is formed by charge transfer neutralization of SiF+2 with Xe; it is primarily in the ground electronic state with about 10% in the metastable first excited electronic state (a 3B1). The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF+2 is 1.38±0.18 Å2. Formation of SiF+ is the major process with a cross section at 70 eV of 2.32±0.30 Å2. The cross section at 70 eV for formation of the Si fragment ion is 0.48±0.08 Å2. Ion pair production contributes a significant fraction of the positively charged fragment ions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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