| Autor: |
Knall, J., Romano, L. T., Biegelsen, D. K., Bringans, R. D., Chui, H. C., Harris, J. S., Treat, D. W., Bour, D. P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1994, Vol. 76 Issue 5, p2697, 6p, 2 Black and White Photographs, 7 Diagrams |
| Abstrakt: |
Deals with a study which investigated threading dislocation removal from gallium arsenide films on silicon by introduction of additional indium gallium arsenide graded strain layers in combination with growth on patterned substrates. Experiment; Analysis of the dislocation structure using transmission electron microscopy; Results and discussion; Conclusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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