| Autor: |
Mei, P., Boyce, J. B., Hack, M., Lujan, R., Ready, S. E., Fork, D. K., Johnson, R. I., Anderson, G. B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1994, Vol. 76 Issue 5, p3194, 6p, 1 Black and White Photograph, 1 Diagram, 2 Charts, 7 Graphs |
| Abstrakt: |
Focuses on a study which described the properties and device characteristics for a dual dielectric gate insulator, amorphous silicon and poly-silicon thin film transistors (TFT) fabricated by a laser dehydrogenation and crystallization process. Fabrication steps for hybrid bottom-gate amorphous silicon and poly-silicon TFT; Material properties of laser crystallized poly-silicon; Importance of the choice of a gate dielectric in making hybrid devices with simple fabrication steps. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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