Characterization of the buried oxide in SOI structures by a rate window method.

Autor: Ioannou-Sougleridis, V., Papaioannou, G. J., Dimitrakis, P., Cristoloveanu, S.
Předmět:
Zdroj: Journal of Applied Physics; 9/1/1993, Vol. 74 Issue 5, p3298, 5p
Abstrakt: Presents a study which developed a method for the characterization of the SOI separation by implanted oxygen oxide. Experimental details; Results; Conclusion.
Databáze: Complementary Index