| Autor: |
Ritley, K. A., Lynn, K. G., Ghosh, V. J., Welch, D. O., McKeown, M. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 9/1/1993, Vol. 74 Issue 5, p3479, 18p |
| Abstrakt: |
Presents information on a study which employed a Monte Carlo calculation to examine the behavior of the implantation profiles and other quantities in the energy range from 25 electronvolt to thermal energies. Procedure for the Monte Carlo method; Effects of the scattering mechanisms in the proposed model; Validation of the power-law description of the mean depth; Implantation profiles. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
