Epitaxial growth of YBa2Cu3O7-δ films on oxidized silicon with yttria- and zirconia-based buffer layers.

Autor: Pechen, E. V., Schoenberger, R., Brunner, B., Ritzinger, S., Renk, K. F., Sidorov, M. V., Oktyabrsky, S. R.
Předmět:
Zdroj: Journal of Applied Physics; 9/1/1993, Vol. 74 Issue 5, p3614, 3p, 1 Diagram, 3 Graphs
Abstrakt: Presents a study of the epitaxial growth of YBa[sub 2]Cu[sub 3]O[sub 7-δ] (YBCO) on oxidized silicon with yttria- and zirconia-based buffer layers. Preparation of YBCO films in silicon; Use of laser ablation technique to preapare the buffer layers and the YBCO films; Methods on depositing buffer layers.
Databáze: Complementary Index