| Autor: |
Radzimski, Z. J., Jiang, B. L., Rozgonyi, G. A., Humphreys, T. P., Hamaguchi, N., Bedair, S. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1988, Vol. 64 Issue 5, p2328, 6p, 1 Black and White Photograph, 8 Diagrams, 1 Chart |
| Abstrakt: |
Examines the generation and propagation of dislocations in GaAsP-InGaAs strained-layer superlattices using X-ray topography and electron-beam-induced current in the scanning electron microscopy. Identification of various types of threading and misfit dislocations; Techniques used for defect studies of both substrates and epitaxial layers; Formation of misfit dislocations. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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