High-quality epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy.

Autor: Yodo, Tokuo, Koyama, Tadashi, Yamashita, Ken
Předmět:
Zdroj: Journal of Applied Physics; 9/1/1988, Vol. 64 Issue 5, p2403, 5p, 1 Chart, 8 Graphs
Abstrakt: Investigates the epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy. Analysis of full width at half maximum of the (400) diffraction pattern; Origin of deep emissions; Description of crystallographic and photoluminescence properties.
Databáze: Complementary Index