High-quality epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy.
Autor: | Yodo, Tokuo, Koyama, Tadashi, Yamashita, Ken |
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Zdroj: | Journal of Applied Physics; 9/1/1988, Vol. 64 Issue 5, p2403, 5p, 1 Chart, 8 Graphs |
Abstrakt: | Investigates the epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy. Analysis of full width at half maximum of the (400) diffraction pattern; Origin of deep emissions; Description of crystallographic and photoluminescence properties. |
Databáze: | Complementary Index |
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