| Autor: |
Ma, Q. Y., Schmidt, M. T., Wu, X., Evans, H. L., Yang, E. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1988, Vol. 64 Issue 5, p2469, 4p, 1 Chart, 4 Graphs |
| Abstrakt: |
Focuses on a study which investigated EL2 midgap trap in gallium arsenide using deep-level transient spectroscopy (DLTS) for contacts having a large range of Schottky barrier height. Calculation of the quasi-Fermi level in the depiction region; Effect of Schottky barrier height on the deep trap signal; Observation on signal intensity in the DLTS. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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