| Autor: |
Liu, Biing-Der, Shieh, Tung-Ho, Wu, Meng-Yueh, Chang, Tien-Chih, Lee, Si-Chen, Lin, Hao-Hsiung |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1992, Vol. 72 Issue 7, p2767, 6p, 9 Graphs |
| Abstrakt: |
Presents a study which examined abnormal outdiffusion problem of heavily beryllium-doped gallium arsenide (GaAs) prepared by molecular-beam epitaxy using double-crystal x-ray spectra, van der Pauw measurements, photoluminescence and infrared-adsorption spectra of beryllium-doped GaAs. Characteristics of beryllium; Materials and methods; Result of electrical and structural analysis of beryllium; Mechanism of the diffusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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