| Autor: |
Andersson, Gert I., Andersson, Mats O., Engström, Olof |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1992, Vol. 72 Issue 7, p2680, 12p |
| Abstrakt: |
Presents observations on discrete conductance fluctuations below the breakdown voltage in selected reverse-biased p[sup+]-n[sup++] base-emitter junctions originating from gate turn-off thyristors. Samples used in the study; Existence of local tunneling paths; Details on the discrete conductance fluctuations; Experiments done in order to study the influence of external stress. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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