| Autor: |
Damaskinos, S., Dixon, A. E., Roberts, G. D., Dagg, I. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1986, Vol. 60 Issue 5, p1681, 8p, 2 Diagrams, 2 Charts, 7 Graphs |
| Abstrakt: |
Examines spatially resolved carrier lifetimes at the same grain boundary (GB), using a series of adjacent samples doped to different levels by neutron transmutation. Cause of the slow decay mechanism; Information on several polycrystalline silicon samples; Effects of GB on lightly doped samples; Disadvantages of the neutron irradiation technique. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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