Photoluminescence and Raman scattering investigations of implanted and thermally annealed InP.

Autor: Olego, D. J., Serreze, H. B.
Předmět:
Zdroj: Journal of Applied Physics; 9/1/1985, Vol. 58 Issue 5, p1979, 3p
Abstrakt: Deals with a study which demonstrated the photoluminescence and Raman scattering measurements to determine concentrations of free electrons at the surfaces of implanted samples. Methodology of the study; Results and discussion.
Databáze: Complementary Index