Thermal emission of charges at Si3N4-GaAs interfaces plasma pretreated with H2, Ar, and Ar+H2.

Autor: Wang, Q. H., Bowser, M. I., Swanson, J. G.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1994, Vol. 76 Issue 7, p4209, 6p, 2 Diagrams, 7 Graphs
Abstrakt: Focuses on a study which examined the thermal emission of charges in Si[sub3]N[sub4] structures, which were prepared using direct plasma-enhanced chemical-vapor deposition. Temperature range when channel current transient spectroscopy was used; Processes observed when argon and hydrogen were used together; Implication of the necessity for argon and hydrogen.
Databáze: Complementary Index