Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy.

Autor:	Tappura, K.
Předmět:	MOLECULAR beam epitaxy SILICON BERYLLIUM PHOTOLUMINESCENCE ALLOYS
Zdroj:	Journal of Applied Physics; 10/1/1993, Vol. 74 Issue 7, p4565, 6p, 1 Chart, 9 Graphs
Abstrakt:	Reports on the electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. Hall mobilities and carrier concentrations of silicon- and beryllium-doped quarternary layers; Room temperature photoluminescence results; Behavior of beryllium doping as a function of alloy composition.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu