Transition between Ge segregation and trapping during high-pressure oxidation of GexSi1-x/Si.

Autor: Frey, E. C., Yu, N., Patnaik, B., Parikh, N. R., Swanson, M. L., Chu, W. K.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1993, Vol. 74 Issue 7, p4750, 6p, 2 Diagrams, 1 Chart, 3 Graphs
Abstrakt: Reports on the transition between germanium segregation and trapping during high-pressure oxidation of Ge[subx]Si[sub1-x]/Si. Analysis of the atomic fraction x of germanium; Effect of oxidation on the germanium distribution; Significance of the oxidation of Ge[subx]Si[sub1-x] alloys.
Databáze: Complementary Index