Degradation of oxides in metal-oxide-semiconductor capacitors under high-field stress.
| Autor: | Patrikar, R. M., Lal, R., Vasi, J. |
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| Zdroj: | Journal of Applied Physics; 10/1/1993, Vol. 74 Issue 7, p4598, 10p, 21 Graphs |
| Abstrakt: | Focuses on a study that examined degradation of oxides in metal-oxide-semiconductor capacitors under high-field stress. Description of the samples used; Techniques employed in stressing the capacitors; Point defects created by Fowler-Nordheim stressing of oxide. |
| Databáze: | Complementary Index |
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