| Autor: |
Zemel, A., Sher, Ariel, Eger, D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1987, Vol. 62 Issue 5, p1861, 8p, 3 Charts, 18 Graphs |
| Abstrakt: |
Focuses on a study which detailed the Hall characterization of narrow-gap p-type Hg[sub1-x]Cd[subx] tellurium epilayers grown by liquid-phase epitaxy. Features of the characterization; Tool useful to the study of anomalous electrical field dependence of the Hall coefficient; Area in which n-type conducting regions are located. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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