Modeling the Effect of the Transconductance Increase in GaAs Field-Effect Transistors.
| Autor: | Gergel’, V. A., Mokerov, V. G., Zelenyı, A. P., Timofeev, M. V. |
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| Zdroj: | Doklady Physics; Oct2002, Vol. 47 Issue 10, p715, 2p |
| Abstrakt: | Examines the effect of the transconductance increase in gallium-arsenic field-effect transistors. Profile of the donor -admixture distribution in a field-effect transistor with the sectioned channel; Electron-temperature distribution in the sectioned structure of a field-effect transistor. |
| Databáze: | Complementary Index |
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