| Autor: |
Zhou, Qiaoying, Manasreh, M. O., Weaver, B. D., Missous, M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/28/2002, Vol. 81 Issue 18, p3374, 3p, 4 Graphs |
| Abstrakt: |
Intersubband transitions in In[SUB0.52]Ga[SUB0.48]As/In[SUB0.52]Al[SUB0.48] As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1 x 10[SUP14] cm[SUP-2] do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1 x 10[SUP14] cm[SUP-2] has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1 x 10[SUP15] cm[SUP-2] and completely depleted after irradiation with a dose of 3 x 10[SUB15] cm[SUP-2]. Furnace thermal annealing of the heavily irradiated samples shows that the Q intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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