Property improvement of srbi 2 ta 2 o 9 thin films prepared at 600°c by pulse-mocvd.
| Autor: | Funakubo, Hiroshi, Mitsuya, Masatoshi, Watanabe, Takayuki, Nukaga, Norimasa |
|---|---|
| Zdroj: | Integrated Ferroelectrics; Jan2001, Vol. 36 Issue 1-4, p103-110, 8p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|