Electrical properties of Y1-based ferroelectric gate MOS capacitors for nonvolatile memory applications.
| Autor: | Arita, K., Otsuki, T., Chen, Z., Lim, M., Bacon, J. W., Paz De Araujo, C. A. |
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| Zdroj: | Integrated Ferroelectrics; Nov1999, Vol. 27 Issue 1-4, p19-29, 11p |
| Databáze: | Complementary Index |
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