| Autor: |
Endo, T., Sadaki, A., Sasaki, S., Sawa, K., Wada, T. |
| Zdroj: |
Radiation Effects; Jan1984, Vol. 84 Issue 1/2, p89-105, 17p |
| Abstrakt: |
The proportional relations between the normalized white-light optical density D/d and an electron dose, and D/d and the damage density in the electron irradiated GaP crystal were obtained in the preceding paper. This paper reports the spatial distributions of damages introduced into GaP by irradiations of collimated electron beams at the incident energies Eo—10 and 16 MeV, obtained from the measurement of the spatial distributions of D/d. The total-depth profile of damages (TDPD) shows distinct maximum near the middle range of depth in its distribution, and it can be approximated by the Gaussian. The 1/10-range Rtd of the TDPD is very small compared with the extrapolated range of electrons Rex and even with the 1/10-range of the energy deposition profile red; Rtd- 9.1 mm (0.49Rex and 0.76red) for E0= 10 MeV. The peak depth RP of the TDPD, which is the projected range of the fitted Gaussian, locates at about half the depth of the peak in the energy deposition profile rP; rp-=2.6 mm =0.54rp for Eo-10 MeV. The damage production rate shows maximum at ĒB(z)/E0≃0.7 both for Eo—10 and 16 MeV, where ĒB(z) is the average energy of traversing electrons at depth z. The effects of annealing and diffusion of defects, and very high energy of the incident electrons, are considered to be causes for the peaked shape of damage distribution. The shallower distribution of damages than that of energy deposition is attributed to the lower energy tail-electrons result from the electron energy straggling. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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