| Autor: |
Ho Rha, Sang, Jung, Jisim, Soo Jung, Yoon, Jang Chung, Yoon, Ki Kim, Un, Suk Hwang, Eun, Keon Park, Byoung, Joo Park, Tae, Choi, Jung-Hae, Seong Hwang, Cheol |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/14/2012, Vol. 100 Issue 20, p203510, 5p, 1 Color Photograph, 4 Graphs |
| Abstrakt: |
In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310 nm channel length were fabricated using a low temperature process (<300 °C), and their device performance was evaluated. The fabricated V-TFTs show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 104 and a threshold voltage of 1.7 V. The influence of the vertical structure on device performance was analyzed in detail. In addition, current polarity characteristics that arise from different metal/a-IGZO contacts were also examined. The non-optimum performance of the V-TFTs was attributed to the fringing-field effect, high defect density, and large source/drain contact resistance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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