| Autor: |
Eckhause, T. A., Lehnert, K., Correa, J. S., Jorstad, R. J., Gwinn, E. G., Thomas, Mason |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/21/2002, Vol. 81 Issue 17, p3203, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
We investigate a Josephson field-effect transistor in which the electron gas in an InAs quantum well serves as the weak link between superconducting Nb electrodes. We modulate the density N[sub s], of electrons and the critical current I[sub c] in the weak link by applying a voltage to an insulated gate. Measurements of the dependence of I[sub c] on N[sub s], are in good agreement with a model in which each occupied subband of the InAs quantum well makes an independent contribution to I[sub c]. Inclusion of the nonparabolic band structure in InAs is crucial to this agreement. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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