| Autor: |
Kennedy, V. John, Terwagne, G., Demortier, G. |
| Předmět: |
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| Zdroj: |
Modern Physics Letters B; 12/20/2001, Vol. 15 Issue 28/29, p1339, 9p |
| Abstrakt: |
Pure polycrystalline Au foils were rolled at room temperature to a thickness of 35 μm. Different doses of high energy Si ions (0.2-4.5 MeV) obtained from the 2 MV Tandetron accelerator at LARN were implanted in polycrystalline Au foils to produce a low melting point Au-Si alloy. Au-Si eutectic structure has been observed in the implanted Au foils after annealing at 400 °C for 1 h. The Au-Si liquid phase diffused into the polycrystalline Au foil along the grain boundaries, which were flattened by the initial rolling procedure. The presence of this eutectic alloy was observed by Secondary Electron Microscopy (SEM) of the Au foil. Nuclear (d,p) reactions induced by deuterons have been used to measure the concentration of the implanted Si in various depths in the Au foils. Rutherford Backscattering Spectrometry (RBS) was also used as a complementary technique to probe for Au. SEM pictures indicate that a eutectic structure was induced in the implanted samples. A pure gold piece is put on top of the region where the silicon has been incorporated by diffusion and the two pieces were simply reheated at 400 °C. After a few minutes, the two pieces were bonded, giving a perfect joint. SEM images of the joining region confirmed this situation by showing a clean soldered region. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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