ODMR of single point defects in silicon nanostructures.

Autor: Bagraev, Nikolay, Danilovsky, Eduard, Gets, Dmitry, Klyachkin, Leonid, Kudryavtsev, Andrey, Kuzmin, Roman, Malyarenko, Anna
Zdroj: Physica Status Solidi (C); May2012, Vol. 9 Issue 5, p1236-1241, 6p
Abstrakt: We present the findings of the optically detected magnetic resonance technique (ODMR), which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ODMR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the transmission spectra within the frameworks of the excitonic normal-mode coupling caused by the microcavities embedded in the Si-QW plane. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index