| Autor: |
Kosyachenko, L. A., Rarenko, I. M., Aoki, T., Sklyarchuk, V. M., Maslyanchuk, O. L., Yurtsenyuk, N. S., Zakharuk, Z. I. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2011, Vol. 14 Issue 4, p421-246, 6p, 2 Charts, 8 Graphs |
| Abstrakt: |
The optical and electrical properties of single Cd1-xMnxTe (x = 0.07 - 0.40) crystals with p-type conduction and resistivity 104 - 108 Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences have been determined. The electrical conductivity of this material and its temperature variation are explained in terms of statistics for electrons and holes in semiconductor with taking into account the compensation process. The energy of ionization and degree of compensation levels responsible for the electrical conductivity of the samples have been found. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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