Low-temperature epitaxy of Si and Ge by direct ion beam deposition.
| Autor: | Zuhr, R. A., Appleton, B. R., Herbots, N., Larson, B. C., Noggle, T. S., Pennycook, S. J. |
|---|---|
| Zdroj: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1987, Vol. 5 Issue 4, p2135-2139, 5p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|