| Autor: |
Teng, J. H., Dong, J. R., Chua, S. J., Lai, M. Y., Foo, B. C., Thompson, D. A., Robinson, B. J., Lee, A. S. W., Hazell, John, Sproule, Irwin |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/2002, Vol. 92 Issue 8, p4330, 6p, 8 Graphs |
| Abstrakt: |
We report the technique of controlled group V quantum well intermixing (QWI) in a compressively strained In[SUB0.76]Ga[SUB0.24]As[SUB0.85]P[SUB0.15]/In[SUB0.76]Ga[SUB0.24]As[SUB0 .52]P[SUB0.48] multiquantum well laser structure and its application to the fabrication of two-section tunable lasers. The blueshift of the band-gap energy was enhanced by capping the samples with films of SiO[SUB2] or low-temperature grown InP, while suppressed by a Si[SUBx]N[SUBy] film with a refractive index of about 2.1. Spatially selective band-gap tuning was achieved by patterning the dielectric film into dot and strip arrays with different surface coverage. Time-of-flight secondary ion mass spectra showed that the enhanced blueshift was caused by the interdiffusion of group V atoms between the quantum wells and barriers. A group V interstitial interdiffusion mechanism is proposed for the sample capped with SiO[SUB2] and this is supported by the even more efficient intermixing induced by low-temperature InP, which contains a high concentration of excess phosphorus. A two-section tunable laser operating around 1.55 μm was fabricated using this QWI technology. A tuning range of about 10 nm was demonstrated by simply changing the current injected into the phase tuning section. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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