Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls.
| Autor: | Grover, Rohit, Hryniewicz, John Vetold, King, Oliver Simon, Van, Vien |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2001, Vol. 19 Issue 5, p1694-1698, 5p |
| Databáze: | Complementary Index |
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