Thermal stability and etching characteristics of electron beam deposited SiO and SiO2.

Autor:	LaRoche, J. R., Ren, F., Lothian, R., Hong, J., Pearton, S. J., Lambers, E., Hsu, C. H., Wu, C. S., Hoppe, M.
Zdroj:	Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 1, p283-287, 5p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu