Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon.
| Autor: | Loesing, R., Guryanov, G. M., Hunter, J. L., Griffis, D. P. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 1, p509-513, 5p |
| Databáze: | Complementary Index |
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