Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe.
| Autor: | Raaijmakers, Ivo J., Sprey, Hessel, Storm, Arjen, Bergman, Timo, Italiano, Joe, Meyer, Doug |
|---|---|
| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1999, Vol. 17 Issue 5, p2311-2320, 10p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|