Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy.
| Autor: | Kuo, H. C., Moser, B. G., Hsia, H., Tang, Z., Feng, M., Stillman, G. E., Lin, C. H., Chen, H. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1999, Vol. 17 Issue 3, p1139-1143, 5p |
| Databáze: | Complementary Index |
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