Effect of in situ plasma oxidation of TiN diffusion barrier for AlSiCu/TiN/Ti metallization structure of integrated circuits.

Autor:	Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., Tremblay, Y.
Zdroj:	Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1999, Vol. 17 Issue 2, p423-431, 9p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu