Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors.
| Autor: | Wang, W., McCarthy, D., Park, D., Ma, D., Marrian, C., Peckerar, M., Goldsman, N., Melngailis, J., Berry, I. L. |
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| Zdroj: | Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1998, Vol. 16 Issue 6, p3812-3816, 5p |
| Databáze: | Complementary Index |
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